Circuit and method of generating a boosted voltage in a semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Young Lee, Hong-Jun Lee, Jung-Hwa Lee
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Abstract
A circuit generates a boosted voltage in a semiconductor memory device, where the semiconductor memory device includes a memory cell array having a plurality of non-edge sub-arrays and at least one edge sub-array. The circuit includes a plurality of boosted voltage generators configured to generate a boosted voltage having different current driving capabilities to activate the non-edge sub-arrays and the edge sub-arrays and to supply the boosted voltage to the memory cell array.
Claims29
A circuit for generating a boosted voltage in a semiconductor memory device, the semiconductor memory device including a memory cell array having a plurality of non-edge sub-arrays and at least one edge sub-array, the circuit comprising:
- a plurality of boosted voltage generators configured to generate a boosted voltage having different current driving capabilities to activate the non-edge sub-arrays and the at least one edge sub-array and to supply the boosted voltage to the memory cell array.
A semiconductor memory device, comprising:
- a memory cell array including a plurality of non-edge sub-arrays and a plurality of edge sub-arrays;
- and
- a boosted voltage generating circuit configured to generate a boosted voltage having different current driving capabilities to activate the non-edge sub-arrays and the edge sub-arrays and to supply the boosted voltage to the memory cell array.
A method of generating a boosted voltage, comprising:
- generating a boosted voltage having different current driving capabilities for activating non-edge sub-arrays and edge sub-arrays;
- and
- supplying the boosted voltage to the non-edge sub-arrays and the edge sub-arrays.
Dependencies are inferred from the claim text.