Method for setting programming start bias for flash memory device and programming method using the same
AssigneeHynix Semiconductor Inc.
InventorSuk Kyung Kim
Life of this patent
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Abstract
A method for setting a programming start bias for a flash memory device to perform a programming operation is provided. First, the method performs pre-programming to change a threshold voltage distribution of a selected transistor using a first programming voltage and detects the maximum threshold voltage level of the changed threshold voltage distribution. The method then calculates the difference between the detected maximum threshold voltage level and a target maximum threshold voltage level and sets a start bias to a voltage obtained by adding the calculated difference to the first programming voltage.
Claims23
A method for setting a programming start bias for a flash memory device, the method comprising:
- performing pre-programming a selected memory cell using a first programming voltage;
- measuring a highest threshold voltage of the selected memory cell after the pre-programming;
- calculating a difference between the highest threshold voltage and a target highest threshold voltage of a target threshold voltage distribution;
- and
- setting a start bias by adding the difference to the first programming voltage for the programming operation.
A method for programming a flash memory device, the method comprising:
- performing pre-programming to a selected memory cell using a first programming voltage;
- measuring a highest threshold voltage of the selected memory cell after the pre-programming;
- calculating a difference between the highest threshold voltage and a target highest threshold voltage of a target threshold voltage distribution;
- setting a start bias by adding the difference to the first programming voltage;
- performing the programming operation using the start bias as an initial programming bias;
- and
- verifying the selected memory cell.
Dependencies are inferred from the claim text.