MRAM read bit with askew fixed layer

An MRAM bit comprising:

• a storage layer having a free magnetization direction that rests along an easy axis of the storage layer in an absence of a magnetic field;
• a reference layer having a fixed magnetization direction that is tilted with respect to the easy axis;
• and
• a spacer layer sandwiched between the reference and storage layers, wherein the fixed magnetization direction is determined by an antiferromagnetic layer located alongside the reference layer, the antiferromagnetic layer being fabricated so as to askew the fixed magnetization direction.

A method of determining a logical state of an MRAM bit, comprising:

• through a first applied magnetic field, canting a storage magnetization direction of a storage layer at a first angle relative to an easy axis of the storage layer;
• with the storage magnetization direction canted at the first angle:
• (a) persisting a fixed magnetization direction of a reference layer of the MRAM bit, the fixed magnetization direction being askew at a second angle relative to the easy axis;
• and
• (b) obtaining a first measure of resistivity of the MRAM bit;
• and
• comparing the first measure of resistivity with a second measure of resistivity of the MRAM bit.