Phase change random access memory
AssigneeSamsung Electronics Co., Ltd.
InventorsHyung-rok Oh, Woo-yeong Cho, Beak-hyung Cho
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Abstract
Provided is a phase change random access (PRAM) memory. The PRAM may include a memory cell array having a plurality of phase change memory cells, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit configured to provide a sensing node with a compensation current to compensate for a decrease in a level of the sensing node caused by a current flowing through one of the plurality of phase change memory cells, and the sense amplifier configured to compare a level of the sensing node with a reference level and output a result of the comparison.
Claims23
A phase change random access memory (PRAM), comprising:
- a memory cell array having a plurality of phase change memory cells;
- and
- a data read circuit including a compensation unit and a sense amplifier,
- the compensation unit configured to provide a sensing node with a compensation current to compensate for a decrease in a level of the sensing node caused by a current flowing through one of the plurality of phase change memory cells and to control the compensation current according to a temperature of the PRAM and
- the sense amplifier configured to compare a level of the sensing node with a reference level and output a result of the comparison.
Dependencies are inferred from the claim text.