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US 7,548,450 B2Granted
Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device
AssigneeFujitsu Limited
InventorMasaki Aoki
Life of this patent
Estimating the term…
Abstract
The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.
Claims3
A method for reading a magnetic memory device comprising:
- a memory cell including:
- a first magnetoresistive effect element;
- a second magnetoresistive effect element serially connected to the first magnetoresistive effect element;
- and a select transistor connected to a connection node between the first magnetoresistive effect element and the second magnetoresistive effect element;
- and a bit line connected to the connection node between the first magnetoresistive effect element and the second magnetoresistive effect element via the select transistor,
- reading a memorized information defined by a resistance state of the first magnetoresistive effect element and a resistance state of the second magnetoresistive effect element based on a voltage of the connection node outputted to the bit line when a read voltage is applied to a serial connection of the first magnetoresistive effect element and the second magnetoresistive effect element.
3 more elements
Dependencies are inferred from the claim text.