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US 7,548,445 B2Granted
Over-driven access method and device for ferroelectric memory
AssigneeMacronix International Co., Ltd.
InventorsChin-Hsi Lin, Chi-Ming Weng
Life of this patent
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Abstract
An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.
Claims2
A bit-line over-driven access method for ferroelectric memory comprising the steps of:
- pre-charging a positive bit line and a negative bit line of the ferroelectric memory to raise the voltages in the positive and the negative bit lines to high levels;
- enabling a word line of the ferroelectric memory to generate a voltage difference between the positive and the negative bit lines;
- providing a first leakage current and a second leakage current to the positive bit line and the negative bit line respectively to further enlarge the voltage difference;
- enabling a sense amplifier of the ferroelectric memory;
- and
- sensing the voltage difference between the positive bit line and the negative bit line and outputting the content stored at the ferroelectric memory accordingly.
3 more elements
Dependencies are inferred from the claim text.