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US 7,548,432 B2Granted
Embedded capacitor structure
AssigneeAgency for Science, Technology and Research
InventorsChee Wai Lu, Boon Keng Lok, Kai Meng Chua, Lai Lai Wai
Life of this patent
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Abstract
An embedded capacitor structure comprising a main body; at least one embedded capacitor, having a first electrode, a dielectric layer, and a second electrode, formed in the main body; and at least one via electrical connection formed in the main body; wherein at least one of the first and second electrodes is free from direct electrical connection to the via electrical connections.
Claims9
An embedded capacitor structure comprising:
- a main body;
- a ground conductive layer;
- a power conductive layer;
- at least one embedded capacitor including a first electrode layer, a dielectric layer, and a second electrode layer, formed in the main body;
- and
- at least one via electrical connection formed in the main body directly electrically connected to one of the ground conductive layer and the power conductive layer;
- wherein one of the first and second electrode layers is free from electrical connection to the ground conductive layer and the power conductive layer;
- wherein the other one of the first and second electrode layers is directly electrically connected to the ground conductive layer or the power conductive layer and is formed integral with said ground conductive layer or said power conductive layer and comprises first and second in-plane conductive portions separated by an in-plane non-conductive/dielectric portion therebetween,
- wherein a capacitance of said one of the first and second electrode layers free from electrical connection to the ground conductive layer or the power conductive layer is chosen for providing high frequency decoupling, and
- wherein a resistance, thickness, or both, of said one of said one of the first and second electrode layers free from electrical connection to the ground conductive layer or the power conductive layer are chosen for providing damping to suppress resonances due to a power plane cavity effect.
7 more elements
A method of manufacturing an embedded capacitors structure, the method comprising:
- forming at least one embedded capacitor in a main body for the embedded capacitor structure, the embedded capacitor having a first electrode layer, a dielectric layer, and a second electrode layer;
- and
- forming at least one via electrical connection in the main body directly electronically connected to one of the ground conductive layer and the power conductive layer;
- wherein at one of the first and second electrode layers is free from electrical connection to the ground conductive layer and the power conductive layer;
- wherein the other one of the first and second electrode layers is directly electrically connected to the ground conductive layer or the power conductive layer and is formed integral with said ground conductive layer or said power conductive layer and comprises first and second in-plane conductive portions separated by an in-plane non-conductive/dielectric portion therebetween,
- wherein a capacitance of said one of the first and second electrode layers free from electrical connection to the ground conductive layer or the power conductive layer is chosen for providing high frequency decoupling, and
- wherein a resistance, thickness, or both, of said one of said one of the first and second electrode layers free from electrical connection to the ground conductive layer or the power conductive layer are chosen for providing damping to suppress resonances due to a power plane cavity effect.
4 more elements
Dependencies are inferred from the claim text.