Liquid crystal display device and method for fabricating the same

A liquid crystal display device having an interconnection line part for applying a signal from a driving circuit to a liquid crystal display panel, comprising:

• a substrate;
• a conductive layer on the substrate, the conductive layer being wider at a center portion of the interconnection line part than in an outer portion of the interconnection line part and the conductive layer being electrically connected to a voltage line;
• an insulating film on the conductive layer;
• and
• a plurality of interconnection lines on the insulating film, the interconnection lines overlapping the conductive layer.

A liquid crystal display device having an interconnection line part for applying a signal from a driving circuit to a liquid crystal display panel, comprising:

• a substrate;
• a plurality of interconnection lines on the substrate;
• an insulating film on the plurality of interconnection lines;
• and
• a conductive layer on the insulating film, the conductive layer having a larger area at a center portion of the interconnection line part than at an outer portion of the interconnection line part.

A method for fabricating a liquid crystal display device having a data interconnection line part for applying a signal from a driving circuit to a liquid crystal display panel;

• and a cell array part in which a plurality of gate lines cross a plurality of data lines to define a pixel region, and thin film transistors (TFTs) are formed at the crossing of the gate and data lines, comprising:
• forming a plurality of gate lines having gate electrodes in the region where the TFTs are formed and simultaneously forming a gate metal pattern layer having a larger area in a center portion of the data interconnection line part than in an outer portion of the data interconnection line part;
• forming a gate insulating film on the entire surface including the gate line and the gate metal pattern layer;
• forming an active layer in an island shape in the region where the respective TFTs are formed;
• and
• forming a plurality of data lines and data interconnection lines substantially perpendicular to the gate lines, so that source and drain electrodes are formed on both sides of the active layer, and a capacitance between the data interconnection lines and the gate metal pattern layer is gradually increased towards the center portion of the data interconnection line part from the outer portion of the data interconnection line part.

A method for fabricating a liquid crystal display device having a data interconnection line part for applying a signal from a driving circuit to a liquid crystal display panel;

• and a cell array part in which a plurality of gate lines cross a plurality of data lines to define a pixel region, and thin film transistors (TFTs) having source and drain electrodes are formed at the crossing of the gate and data lines, comprising:
• forming an active layer in the region where the TFTs are formed;
• forming a gate insulating film on the entire surface of the substrate;
• forming a plurality of gate lines on the gate insulating film at the cell array part and forming a gate metal pattern layer on the gate insulating film at the data interconnection line part, so that a gate electrode is formed above the active layer, and so that a first width of the gate metal pattern at a center portion of the data interconnection line part is greater than a second width of the gate metal pattern at an outer portion of the data interconnection line part;
• forming an impurity region in the active layer using the gate electrode as a mask, and forming an interlayer insulating film on the entire surface including the gate line and the gate metal pattern layer so as to form a contact hole in the impurity region;
• and
• forming a plurality of data and data interconnection lines substantially perpendicular to the gate lines, so that source and drain electrodes are connected to the impurity region through the contact hole, and a capacitance with the gate metal pattern layer is gradually increased towards the center portion from the outer portion.

A method for fabricating a liquid crystal display device having a gate interconnection line part for applying a signal from a driving circuit to a liquid crystal display panel;

• and a cell array part in which a plurality of gate lines cross a plurality of data lines to define a pixel region, and thin film transistors (TFTs) are formed at the crossing of the gate and data lines, comprising:
• forming an active layer in the region where the TFTs are formed;
• forming a gate insulating film on the entire surface of the active layer;
• forming a plurality of gate lines and gate interconnection lines on the gate insulating film so as to form a gate electrode on the active layer;
• forming an impurity region in the active layer using the gate electrode as a mask, and forming an interlayer insulating film on the entire surface including the gate lines and the gate interconnection lines so as to form a contact hole in the impurity region;
• and forming a plurality of data lines substantially perpendicular to the gate lines to connect source and drain electrodes to the impurity region through the contact hole, and simultaneously
• forming a data metal pattern layer to overlap the gate interconnection lines, so that a first width of the data metal pattern layer at a center portion of the gate interconnection line part is greater than a second width of the data metal pattern layer at an outer portion of the gate interconnection line part.

A method for fabricating a liquid crystal display device having a gate interconnection line part for applying a signal from a driving circuit to a liquid crystal display panel;

• and a cell array part in which a plurality of gate lines cross a plurality of data lines to define a pixel region, and thin film transistors (TFTs) are formed at the crossing of the gate and data lines, comprising:
• forming a plurality of gate lines and gate interconnection lines having gate electrodes in the region where the TFTs are formed;
• forming a gate insulating film on the entire surface including the gate lines and the gate interconnection lines;
• forming an active layer in an island shape in the region where the TFTs are formed;
• and
• forming a plurality of data lines substantially perpendicular to the gate lines to form source and drain electrodes on both sides of the active layer, and simultaneously forming a data metal pattern layer to overlap the gate interconnection lines, so that a first width of the data metal pattern layer at a center portion of the gate interconnection line part is greater than a second width of the data metal pattern layer at an outer portion of the gate interconnection line part.