Back to results
US 7,548,111 B2Granted
Miniature dual band power amplifier with reserved pins
AssigneeMicro Mobio Corporation
InventorsIkuroh Ichitsubo, Kanya Kubota, Masaya Kuwano, Koshiro Matsumoto
Life of this patent
Estimating the term…
Abstract
A radio frequency (RF) module provides first and second power amplifiers configured to produce first and second amplified RF signals at first and second output RF terminals, respectively; and first and second arrays of pads positioned opposite each other, the first array including the first output RF terminal and the second array including the second output RF terminal. The module also provides two reserve terminals that can be connected to capacitors, inductors, sensors for RF linearity, or can be left unconnected.
Claims20
A radio frequency (RF) module, comprising:
- a first RF power amplifier configured to produce a first amplified RF signal at a first output terminal in response to a first input RF signal received at a first input terminal;
- a second RF power amplifier configured to produce a second amplified RF signal at a second output terminal in response to a second input RF signal received at a second input terminal;
- a detector circuit configured to detect the first amplified RF signal and the second amplified RF signal and to output a power sensing signal;
- a detector terminal configured to receive the power sensing signal;
- a first array of pads along a first side of the RF module, the first array of pads having the first input terminal and the first RF output terminal;
- and
- a second array of pads along a second side of the RF module opposing to the first side, the second array of pads having the second input terminal and the second RF output terminal, wherein the detector terminal is located in the first array or the second array of pads.
4 more elements
A radio frequency (RF) module, comprising:
- a first RF power amplifier configured to produce a first amplified RF signal at a first output terminal in response to a first input RF signal received at a first input terminal;
- a second RF power amplifier configured to produce a second amplified RF signal at a second output terminal in response to a second input RF signal received at a second input terminal;
- a detector circuit configured to detect the first amplified RF signal and the second amplified RF signal and to output a power sensing signal;
- a detector terminal configured to receive the power sensing signal;
- a first array of pads along a first side of the RF module, the first array of pads having the first input terminal, the first RF output terminal, and a first power supply terminal configured to receive a first power supply voltage;
- a second array of pads along a second side of the RF module opposing to the first side, the second array of pads having the second input terminal, the second RF output terminal, and a second power supply terminal configured to receive a second power supply voltage, wherein the first input terminal and the first output terminal are respectively positioned at a first end and a second end of the first array, wherein the second input terminal and the second output terminal are respectively positioned at a first end and a second end of the second array, wherein the first input terminal and the second input terminal are positioned adjacent respectively to two neighboring corners of the RF module, wherein the detector terminal is located in the first array or the second array of pads;
- and
- a third side and a fourth side opposing to the third side, wherein the third side and the fourth side do not comprise any pads, terminals, or a connector to ground.
5 more elements
A radio frequency (RF) module, comprising:
- a first RF power amplifier configured to produce a first amplified RF signal at a first output terminal in response to a first input RF signal received at a first input terminal;
- a first biasing circuit configured to provide a first biasing signal to the first RF power amplifier in response to a first bias control signal received at a first bias terminal;
- a second RF power amplifier configured to produce a second amplified RF signal at a second output terminal in response to a second input RF signal received at a second input terminal;
- a second biasing circuit configured to provide a second biasing signal to the second RF power amplifier in response to a second bias control signal received at a second bias terminal;
- a detector circuit configured to detect the first amplified RF signal and the second amplified RF signal and to output a power sensing signal;
- a detector terminal configured to receive the power sensing signal;
- a gain step terminal configured to receive a step gain signal to control the first biasing circuit and the second biasing circuit;
- a first array of pads along a first side of the RF module, the first array of pads having the first input terminal, the first RF output terminal, and the first bias terminal;
- and
- a second array of pads along a second side of the RF module opposing to the first side, the second array of pads having the second input terminal, the second RF output terminal, and the second bias terminal, wherein the detector terminal and the gain step terminal are respectively located in the first array or the second array of pads, wherein the gain step terminal is positioned in a different one of the first array and the second array from where the detector terminal are positioned.
7 more elements
Dependencies are inferred from the claim text.