Methods for measuring capacitance
AssigneesSematech, Inc., Rutgers University
InventorsKin P. Cheung, Dawei Heh, Byoung Hun Lee, Rino Choi
Life of this patent
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Abstract
Methods for determining capacitance values of a metal on semiconductor (MOS) structure are provided. A time domain reflectometry circuit may be loaded with a MOS structure. The MOS structure may be biased with various voltages, and reflectometry waveforms from the applied voltage may be collected. The capacitance of the MOS structure may be determined from the reflectometry waveforms.
Claims8
A method for measuring capacitance value of a metal-oxide-semiconductor (MOS) structure, comprising:
- determining a reference waveform;
- biasing a MOS structure with a DC voltage;
- determining a reflectivity waveform of the biased MOS structure;
- and
- determining a capacitance value of the MOS structure as a function of the reference reflectivity waveform and the reflectivity waveform of the biased MOS structure.
A method for measuring capacitance value of a metal-oxide-semiconductor (MOS) structure, comprising:
- biasing the MOS structure with a first voltage;
- biasing the MOS structure with a second voltage;
- determining a reflectivity waveform for the biased MOS structure with the first voltage and a reflectivity waveform from the biased MOS structure with the second voltage;
- and
- determining a capacitance value of the MOS structure as a function of the reflectivity waveform for the biased MOS structure with the first voltage and the reflectivity waveform from the biased MOS structure with the second voltage.
A method for measuring capacitance value of a metal-oxide-semiconductor (MOS) structure, comprising:
- applying a first voltage to a time domain reflectometry circuit;
- determining a reflectivity waveform as a function of the first voltage;
- coupling a MOS structure to the time domain reflectometry circuit;
- biasing the MOS structure with a DC voltage;
- applying a second voltage to the time domain reflectometry circuit;
- determining a reflectivity waveform as a function of the second and DC voltages;
- and
- determining a capacitance value of the MOS structure as a function of the reflectivity waveform of the first voltage and the reflectivity waveform of the second and DC voltages.
Dependencies are inferred from the claim text.