Semiconductor integrated circuit device
AssigneesRenesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
InventorsMasao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
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Abstract
Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
Claims12
A semiconductor integrated circuit device, comprising:
- a semiconductor substrate;
- circuit elements and wirings which are provided on one main surface of the semiconductor substrate and constitute a circuit;
- first electrodes provided on the one main surface and electrically connected to the circuit, wherein said first electrodes is disposed on a top layer of said circuit;
- an organic insulating film provided on the circuit except for openings on the surfaces of the first electrodes;
- a conductive layer disposed on the organic insulating film, said conductive layer is connected through said openings with said first electrode;
- first and second external connecting electrodes provided on said conductive layer, wherein said conductive layer used to electrically connect the first and second external connecting electrodes to the first electrodes.
Dependencies are inferred from the claim text.