Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor construction assembly including projecting electrodes which are coupled to pads of a semiconductor substrate and which have substantially flat respective upper surfaces, and a first sealing member which is formed between the projecting electrodes and covers an upper surface of the semiconductor substrate while externally exposing at least the upper surfaces of the projecting electrodes such that the substantially flat upper surfaces of the projecting electrodes and an upper surface of the first sealing member are substantially flush with each other;
• an upper insulating layer which covers one entire surface of the semiconductor construction assembly;
• a second sealing member which covers a side surface of the semiconductor construction assembly extending from the substrate to the first sealing member;
• and
• an upper conductor which is formed on the upper insulating layer, is electrically connected to the projecting electrode, and extends to a region corresponding to the second sealing member.

A semiconductor device comprising:

• a semiconductor construction assembly including:
• (i) a semiconductor substrate having first and second surfaces that are mutually opposed to each other, and a plurality of side surfaces between the first surface and the second surface, (ii) an integrated circuit element formed on the first surface, (iii) a plurality of connection pads which are arranged on the first surface and connected to the integrated circuit element, (iv) a protective layer which is formed to cover the first surface of the semiconductor substrate, so as not to extend beyond the side surfaces of the semiconductor substrate, and which has openings for exposing the connection pads, (v) a plurality of conductors which are connected to the connection pads and arranged on the protective layer and which have pads, (vi) columnar electrodes formed on the pads of the conductors, and (vii) a sealing film formed between the columnar electrodes and on the protective layer;
• a sealing member which covers at least one side surface of the semiconductor construction assembly;
• an upper insulating layer which covers the semiconductor construction assembly and the sealing member except for portions corresponding to the columnar electrodes so as to expose an upper surface of each of the columnar electrodes;
• upper conductors which are formed on the upper insulating layer, and each of which includes one end that is electrically connected to the pad of one of the conductors via one of the columnar electrodes and at least one external connection pad;
• wherein an external connection pad of at least one of the upper conductors is disposed in a region opposing the sealing member.