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US 7,547,966 B2Granted
Power semiconductor module
AssigneeHitachi, Ltd.
InventorsSunao Funakoshi, Katsumi Ishikawa, Tasao Soga
Life of this patent
Estimating the term…
Abstract
A power semiconductor module with its thermal resistance and overall size reduced. Insulating substrates with electrode metal layers disposed thereon are joined to both the surfaces of a power semiconductor chip by using, for example, soldering. Metal layers are disposed also on the reverse surfaces of the insulating substrates and the metal layers are joined to the heat spreaders by using brazing. Heat radiating fins are provided on the heat radiating surface of at least one of the heat spreaders. The heat radiating side of each of the heat spreaders is covered by a casing to form a refrigerant chamber through which refrigerant flows to remove heat transmitted from the semiconductor chip to the heat spreader.
Claims21
A power semiconductor module comprising
- power semiconductor chips;
- first insulating substrates having metal electrode layers disposed on their surfaces, the metal electrode layers being joined to first principal surfaces of the power semiconductor chips;
- second insulating substrates having metal electrode layers disposed on their surfaces, the metal electrode layers being joined to second principal surfaces of the power semiconductor chips;
- a first heat spreader disposed on rear surfaces of the first insulating substrates;
- a second heat spreader disposed on rear surfaces of the second insulating substrates;
- and
- a resin member for sealing the power semiconductor chips, and the first and second insulating substrates therein,
- wherein the first and second insulating substrates have rear metal layers disposed on their rear surfaces, respectively;
- one surface of the first heat spreader is joined to the rear metal electrodes of the first insulating substrates by using brazing, to achieve connection between the first heat spreader and the first insulating substrates;
- one surface of the second heat spreader is joined to the rear metal electrodes of the second insulating substrates by using brazing, to achieve connection between the second heat spreader and the second insulating substrates;
- and heat radiating fins are provided on the other surface of at least one of the first and second heat spreaders.
8 more elements
A power semiconductor module comprising
- plural power semiconductor chips;
- first insulating substrates having metal electrode layers disposed on their surfaces, the metal electrode layers being joined to first principal surfaces of the power semiconductor chips;
- second insulating substrates having metal electrode layers disposed on their surfaces, the metal electrode layers being joined to second principal surfaces of the power semiconductor chips;
- a first heat sink disposed on rear surfaces of the first insulating substrates;
- a second heat sink disposed on rear surfaces of the second insulating substrates;
- and
- a resin member for sealing the power semiconductor chips, and the first and second insulating substrates therein,
- wherein the first and second insulating substrates have rear metal layers disposed on their rear surfaces, respectively;
- the first heat sink is joined to the rear metal electrodes of the first insulating substrates by using brazing, to achieve connection between the first heat sink and the first insulating substrates;
- the second heat sink is joined to the rear metal electrodes of the second insulating substrates by using brazing, to achieve connection between the second heat sink and the second insulating substrates;
- and at least one of the first and second heat sinks has a micro channel structure.
8 more elements
A power semiconductor module comprising
- power semiconductor chips;
- first insulating substrates having metal electrode layers disposed on their surfaces, the metal electrode layers being joined to first principal surfaces of the power semiconductor chips;
- second insulating substrates having metal electrode layers disposed on their surfaces, the metal electrode layers being joined to second principal surfaces of the power semiconductor chips;
- a heat spreader disposed on rear surfaces of the first insulating substrates;
- heat pipes with the first ends thereof connected with rear surfaces of the second insulating substrates and the second ends thereof connected with the heat spreader;
- and
- a resin member for sealing the power semiconductor chips, and the first and second insulating substrates therein,
- wherein the first and second insulating substrates have rear metal layers disposed on their rear surfaces, respectively;
- the heat spreader is joined to the rear metal electrodes of the first insulating substrates by using brazing, to achieve connection between the heat spreader and the first insulating substrates;
- and the first ends of the heat pipes are joined to the rear surfaces of the second insulating substrates by using brazing, to achieve connection between the heat pipes and the second insulating substrates, and the second ends of the heat pipes are joined to the heat spreader by using brazing.
7 more elements
Dependencies are inferred from the claim text.