Method for hafnium nitride deposition
AssigneeApplied Materials, Inc.
InventorsCraig Metzner, Shreyas Kher, Yeong Kwan Kim, M. Noel Rocklein, Steven M. George
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Abstract
The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.
Claims15
A composition of a semiconductor material, comprising:
- a film comprising a plurality of layers and having the chemical formula of HfSiXOYNZ,
- wherein x is at least about 0.2 and less than about 4;
- y is at least about 0.5 and less than about 4;
- z is at least about 0.05 and less than 2;
- and wherein the plurality of layers comprises:
- a first hafnium layer;
- a first nitrogen layer disposed on the first hafnium layer;
- a first silicon layer disposed on the first nitrogen layer;
- and
- a first oxygen layer disposed on the first silicon layer.
A composition of a semiconductor material, comprising:
- a film comprising a plurality of layers and having the chemical formula of HfSiXOYNZ,
- wherein x is at least about 0.2 and less than about 4;
- y is at least about 0.5 and less than about 4;
- z is at least about 0.05 and less than 2;
- and wherein the plurality of layers comprises:
- a first hafnium layer;
- a first oxygen layer disposed on the first hafnium layer;
- a first nitrogen layer disposed on the first oxygen layer;
- and
- a first silicon layer disposed on the first nitrogen layer.
A composition of a semiconductor material, comprising:
- a film comprising a plurality of layers and having the chemical formula of HfSIXOYNZ,
- wherein x is at least about 0.2 and less than about 4;
- y is at least about 0.5 and less than about 4;
- z is at least about 0.05 and less than 2;
- and wherein the plurality of layers comprises:
- a first hafnium layer;
- a first silicon layer disposed on the first hafnium layer;
- a first oxygen layer disposed on the first silicon layer;
- and
- a first nitrogen layer disposed on the first oxygen layer.
Dependencies are inferred from the claim text.