Semiconductor device and circuit having multiple voltage controlled capacitors
AssigneeSensor Electronic Technology, Inc.
InventorsGrigory Simin, Michael Shur, Remigijus Gaska
Life of this patent
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Abstract
An improved solution for performing switching, routing, power limiting, and/or the like in a circuit, such as a radio frequency (RF) circuit, is provided. A semiconductor device that includes at least two electrodes, each of which forms a capacitor, such as a voltage-controlled variable capacitor, with a semiconductor channel of the device is used to perform the desired functionality in the RF circuit. The device includes electrodes that can provide high power RF functionality without the use of ohmic contacts or requiring annealing.
Claims13
A circuit comprising:
- a semiconductor device that includes:
- a semiconductor channel;
- a first electrode formed over the semiconductor channel, wherein the first electrode and the semiconductor channel form a first voltage controlled capacitor;
- a second electrode formed over the semiconductor channel, wherein the second electrode and the semiconductor channel form a second voltage controlled capacitor;
- and
- a third electrode formed over the semiconductor channel;
- a first signal connected to the first electrode;
- a second signal connected to the second electrode, wherein the second signal has an opposite polarity as a polarity of the first signal;
- and
- a third signal connected to the third electrode, wherein the third signal comprises one of:
- a control voltage for switching one of:
- the first signal or the second signal on and off or an input signal of a radio frequency (RF) router.
A method of manufacturing a circuit, the method comprising:
- obtaining a semiconductor device that includes:
- a semiconductor channel;
- a first electrode formed over the semiconductor channel, wherein the first electrode and the semiconductor channel form a first voltage controlled capacitor;
- a second electrode formed over the semiconductor channel, wherein the second electrode and the semiconductor channel form a second voltage controlled capacitor;
- and
- a third electrode formed over the semiconductor channel;
- connecting a first signal to the first electrode;
- connecting a second signal to the second electrode, wherein the second signal has an opposite polarity as a polarity of the first signal;
- and
- connecting a third signal to the third electrode, wherein the third signal comprises one of:
- a control voltage for switching one of:
- the first signal or the second signal on and off or an input signal of a radio frequency (RF) router.
Dependencies are inferred from the claim text.