Magneto-resistive effect element and magnetic memory
AssigneeKabushiki Kaisha Toshiba
InventorYoshiaki Saito
Life of this patent
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Abstract
It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.
Claims14
A magnetic memory comprising at least a memory cell, the memory cell including a magneto-resistive effect element as a memory element, the magneto-resistive effect element including:
- a magnetization-pinned layer comprising a magnetic film having a first surface, a second surface opposite to the first surface, and third surfaces different from the first and second surfaces, the magnetic film having a spin moment oriented in a direction perpendicular to the first surface and pinned in the direction;
- a magnetic recording layer provided to face the first surface and having a spin moment oriented in a direction perpendicular to the first surface, a direction of the spin moment of the magnetic recording layer being parallel or antiparallel to that of the magnetization-pinned layer;
- a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer;
- and
- an anti-ferromagnetic film formed on at least the third surfaces of the magnetization-pinned layer and being exchange-coupled to the magnetization-pinned layer so that the spin moment of the magnetic film is oriented in the direction perpendicular to the first surface.
A magnetic memory comprising:
- a first wiring;
- a second wiring crossing the first wiring;
- a magneto-resistive effect element arranged in a crossing area between the first wiring and the second wiring, having one end electrically connected to the first wiring, and including a magnetization-pinned layer comprising a magnetic film having a first surface, a second surface opposite to the first surface, and third surfaces different from the first and second surfaces, the magnetic film having a spin moment oriented in a direction perpendicular to the first surface and pinned in the direction;
- a magnetic recording layer provided to face the first surface and having a spin moment oriented in a direction perpendicular to the first surface, a direction of the spin moment of the magnetic recording layer being parallel or antiparallel to that of the magnetization-pinned layer;
- a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer;
- and
- an anti-ferromagnetic film formed on at least the third surfaces of the magnetization-pinned layer and being exchange-coupled to the magnetization-pinned layer so that the spin moment of the magnetic film is oriented in the direction perpendicular to the first surface.
Dependencies are inferred from the claim text.