Semiconductor device and manufacturing method of a semiconductor device

A semiconductor device comprising:

• an insulating film formed over a semiconductor substrate;
• an adhesive layer made of alumina formed on the insulating film and having a surface roughness of 0.79 nm or less;
• a capacitor lower electrode formed on the adhesive layer, and having a (111) orientation that is inclined from a perpendicular direction of an upper surface of the semiconductor substrate by 2.3° or less;
• a ferroelectric layer formed on the capacitor lower electrode, and having an ABO3 perovskite structure (A=any one of Bi, Pb, Ba, Sr, Ca, Na, K, and a rare earth element, B=any one of Ti, Zr, Nb, Ta, W, Mn, Fe, Co, and Cr);
• and
• a capacitor upper electrode formed on the ferroelectric layer.