AlGaN/GaN high electron mobility transistor devices
AssigneeInteruniversitair Microelektronica Centrum (IMEC)
InventorsMarianne Germain, Joff Derluyn, Maarten Leys
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Abstract
The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin SiN layer on the top AlGaN layer, in the reactor where the growth takes place at high temperature, prior cooling down the structure and loading the sample out of the reactor, as well as a method to produce some HEMT transistors on those heterostructures, by depositing the contact on the surface without any removal of the SiN layer by MOCVD. The present invention recites also a device.
Claims14
A semiconductor device comprising:
- a substrate;
- a first active layer;
- a second active layer on the first active layer, the second active layer having a higher bandgap than the first active layer;
- a two-dimensional electron gas layer between the first active layer and the second active layer;
- a passivation layer comprising an electron donating element and nitrogen, wherein the passivation layer is on the second active layer;
- and
- a source contact and a drain contact directly on the passivation layer.
Dependencies are inferred from the claim text.