Semiconductor chip for optoelectronics
AssigneeOSRAM Opto Semiconductors GmbH
InventorsStefan Illek, Klaus Streubel, Walter Wegleiter, Andreas Ploessl, Ralph Wirth
Life of this patent
Estimating the term…
Abstract
An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.
Claims31
A semiconductor chip for optoelectronics, comprising:
- an active thin-film layer in which a photon-emitting active zone is fashioned;
- a carrier member for the thin-film layer that is arranged at a side of the thin-film layer facing away from an emission direction of the chip and is connected thereto;
- and
- a plurality of mesas formed at a boundary between said carrier member and said active thin-film layer, each of said plural mesas protruding from a second part of the thin-film layer and being formed by at least one cavity formed in the active thin-film layer proceeding from the carrier member, and said plural mesas being in a single light emitting diode and being connected with each other by the second part of said thin-film layer, said active zone being arranged in the second part of the thin-film layer.
A semiconductor chip for optoelectronics, comprising:
- an active thin-film layer in which a photon-emitting active zone is formed;
- a carrier member for the thin-film layer that is arranged at a side of the thin-film layer facing away from an emission direction of the chip and is connected thereto;
- and
- a plurality of mesas formed at a boundary between said carrier member and said active thin-film layer, each of said plural mesas being formed by at least one cavity formed in the active thin-film layer proceeding from the carrier member, said plural mesas being in a single light emitting diode and being covered by a reflection layer comprising an insulating layer and a metallization layer applied thereon, said insulating layer being interrupted by through-contacts.
A semiconductor chip for optoelectronics, comprising
- an active thin-film layer in which a photon-emitting active zone is fashioned formed;
- said thin-film layer comprising a bonding side and a plurality of mesas, each of said plural mesas being formed by at least one cavity proceeding from said bonding side of the active thin-film layer and being covered by a reflection layer comprising an insulating layer and a metallization layer applied thereon, said insulating layer being interrupted by through-contacts.
A semiconductor chip for optoelectronics, comprising:
- an active thin-film layer in which a photon-emitting active zone is fashioned formed;
- said thin-film layer comprising a plurality of mesas formed at a side of the thin-film layer facing away from an emission direction of the chip, each of said plural mesas protruding from a second part of the thin-film and being formed by at least one cavity formed in the active thin-film layer proceeding from said side of the thin-film layer facing away from an emission direction of the chip carrier member, and said plural mesas being connected by the second part of the thin-film which includes at least a portion of said active zone.
A semiconductor chip for optoelectronics, comprising:
- an active thin-film layer in which a photon-emitting active zone is formed;
- said thin-film layer comprising a bonding side and a plurality of mesas, each of said plural mesas being formed by at least one cavity proceeding from said bonding side of the active thin-film layer and protruding from a second part of the thin-film, said plural mesas being connected by the second part of the thin-film lay which includes at least a portion of said active zone.
Dependencies are inferred from the claim text.