Electronic circuit
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMinoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
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Abstract
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
Claims28
A display device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region;
- and
- a pixel electrode comprising zinc oxide electrically connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode,
- wherein the first layer has a barrier characteristics, the second layer comprises aluminum, and the third layer has a barrier characteristics.
A display device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region;
- and
- a pixel electrode comprising zinc oxide electrically connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode,
- wherein the first layer has a barrier characteristics, the second layer comprises aluminum, and the third layer has a barrier characteristics, and
- wherein the pixel electrode is in contact with an upper surface of the third layer.
A display device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region;
- and
- a pixel electrode comprising zinc oxide electrically connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode,
- wherein the first layer has a barrier characteristics, the second layer comprises aluminum, and the third layer has a barrier characteristics, and
- wherein the pixel electrode is in contact with a side surface of the first layer.
A display device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region;
- and
- a pixel electrode comprising zinc oxide electrically connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode,
- wherein the first layer has a barrier characteristics, the second layer comprises aluminum, and the third layer has a barrier characteristics, and
- wherein the pixel electrode is in contact with a side surface of the second layer.
Dependencies are inferred from the claim text.