Semiconductor device having SiOxNy film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorSatoshi Teramoto
Life of this patent
Estimating the term…
Abstract
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNy is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1×1015 to 1×1019 cm−3 and hydrogen at a concentration of 2×1019 to 5×1021 cm−3.
Claims26
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode, the gate insulating film including a first insulating layer comprising silicon oxide over the gate electrode and a second insulating layer comprising SiOxNy where x and y are 0<x<2, 0<y<4/3 over the first insulating layer;
- and
- a semiconductor layer formed over the gate insulating film,
- wherein a nitrogen concentration of the first insulating layer is smaller than a nitrogen concentration of the second insulating layer.
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode, the gate insulating film including a first insulating layer comprising silicon oxide over the gate electrode and a second insulating layer comprising SiOxNy where x and y are 0<x<2, 0<y<4/3 over the first insulating layer;
- and
- an amorphous semiconductor layer formed over the gate insulating film;
- wherein a nitrogen concentration of the first insulating layer is smaller than a nitrogen concentration of the second insulating layer.
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode, the gate insulating film including a first insulating layer comprising silicon oxide over the gate electrode and a second insulating layer comprising SiOxNy where x and y are 0<×<2, 0<y<4/3 over the first insulating layer;
- and
- an amorphous semiconductor film formed over the gate insulating film;
- and
- a semiconductor layer comprising a source area and a semiconductor layer comprising a drain area formed over the amorphous semiconductor film,
- wherein a nitrogen concentration of the first insulating layer is smaller than a nitrogen concentration of the second insulating layer.
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode, the gate insulating film including a first insulating layer containing silicon and oxygen over the gate electrode and a second insulating layer containing silicon and oxygen over the first insulating layer;
- and
- a semiconductor layer formed over the gate insulating film,
- wherein a nitrogen concentration of the first insulating layer is smaller than a nitrogen concentration of the second insulating layer.
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode, the gate insulating film including a first insulating layer containing silicon and oxygen over the gate electrode and a second insulating layer containing silicon and oxygen over the first insulating layer;
- and
- an amorphous semiconductor layer formed over the gate insulating film;
- wherein a nitrogen concentration of the first insulating layer is smaller than a nitrogen concentration of the second insulating layer.
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode, the gate insulating film including a first insulating layer containing silicon and oxygen over the gate electrode and a second insulating layer containing silicon and oxygen over the first insulating layer;
- an amorphous semiconductor film formed over the gate insulating film;
- and
- a semiconductor layer comprising a source area and a semiconductor layer comprising a drain area formed over the amorphous semiconductor film,
- wherein a nitrogen concentration of the first insulating layer is smaller than a nitrogen concentration of the second insulating layer.
Dependencies are inferred from the claim text.