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US 7,547,911 B2Granted
Gan-based field effect transistor and production method therefor
AssigneeNational Institute of Information and Communications Technology, Incorporated Administrative Agency
InventorMasataka Higashiwaki
Life of this patent
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Abstract
A GaN-based heterostructure field effect transistor capable of accomplishing higher output, higher breakdown voltage, higher speed, higher frequency, and the like. A heterostructure field effect transistor including a channel layer (4) of GaN and a barrier layer (6) of AlGaN, wherein the surface of a transistor element has an insulating film (10).
Claims6
A GaN-based field-effect transistor comprising:
- a substrate;
- a buffer layer;
- a channel layer consisting of GaN;
- a barrier layer consisting of AlGaN;
- and
- an insulating film on a surface of the GaN-based field-effect transistor device,
- wherein the GaN-based field-effect transistor has a heterostructure including the channel layer and the barrier layer,
- wherein the insulating film comprises SiN formed by a hot wire CVD method,
- wherein a thickness of the insulation film is 1 nm-100 nm,
- wherein a thickness of the barrier layer is 1-30 nm, and
- wherein the thickness of the barrier layer is constant.
8 more elements
Dependencies are inferred from the claim text.