III-nitride light emitting devices grown on templates to reduce strain

A The device comprising:

• a III-nitride structure comprising:
• a first layer, wherein the first layer is substantially free of indium;
• a second layer grown over the first layer, wherein the second layer is a non- single crystal layer comprising indium;
• device layers grown over the second layer, the device layers comprising a III- nitride light emitting layer disposed between an n-type region and a p-type region;
• and
• a third layer disposed between the second layer and the light emitting layer and in direct contact with the second layer, wherein the third layer is a non-single crystal layer comprising indium.

A device comprising:

• a III-nitride structure comprising:
• a first layer, wherein the first layer is substantially free of indium;
• a second layer grown over the first layer, wherein the second layer is a non-single crystal layer comprising indium;
• device layers grown over a second layer, the device layers comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;
• and
• a third layer disposed between the second layers and the light emitting layer and in direct contact with the second layer, wherein the third layer is a non-single crystal layer comprising indium.

A device comprising:

• a first substantially single crystal layer;
• a second substantially single crystal layer;
• and
• a non-single crystal layer comprising indium disposed between the first and second substantially single crystal layers.

A device comprising:

• a III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein:
• a threading dislocation density in the light emitting layer is less than 3×109 cm−2;
• and
• an a-lattice constant in the light emitting layer is greater than 3.200 Å.