Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system

An image pick-up apparatus comprising:

• a plurality of pixels arranged in a two-dimensional manner on a substrate, each of the plurality of pixels including a pair of semiconductor conversion elements for convening an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion elements, the thin film transistor including a gate electrode, a source electrode, and a drain electrode;
• gate wiring to which gate electrodes of thin film transistors of pixels arranged in a first direction are commonly connected;
• signal wiring to which source electrodes or drain electrodes of thin film transistors of pixels arranged in a direction different from the first direction are commonly connected on the substrate;
• and
• a protection layer extending over the thin film transistors, the gate wiring, and the signal wiring,
• wherein the semiconductor conversion elements extend over a part of the protection layer,
• wherein the protection layer is a single layer that includes, for each pixel, an aperture extending over an area in which a hole is formed for electrically connecting the semiconductor conversion elements with the corresponding thin film transistor, and an aperture extending, for reducing a stress of the protection layer, over an area in which the semiconductor conversion elements are formed, and
• wherein the protection layer includes a film selected from:
• a SiO2 film, a SiON film, and a SiNx film.