Pattern defect inspection method and apparatus thereof
AssigneeHitachi High-Technologies Corporation
InventorsMasaki Hasegawa, Hiroshi Makino, Hikaru Koyama, Zhaohui Cheng, Hisaya Murakoshi
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi High-Technologies Corporation
InventorsMasaki Hasegawa, Hiroshi Makino, Hikaru Koyama, Zhaohui Cheng, Hisaya Murakoshi
Estimating the term…
In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
A defect inspection method comprising:
A defect inspection method comprising:
An inspection apparatus comprising:
Dependencies are inferred from the claim text.