Laser irradiation method and method for manufacturing semiconductor device including an autofocusing mechanism using the same

A laser irradiation method comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of an irradiation object where a swell exists along a first direction;
• and
• irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and a second direction perpendicular to the first direction;
• wherein a distance between the lens and the irradiation object is controlled by an autofocusing mechanism before the irradiation object is moved in the second direction.

A laser irradiation method comprising:

• emitting a first laser beam from a laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of an irradiation object where a swell exists along a first direction;
• and
• irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and a second direction perpendicular to the first direction;
• wherein a distance between the lens and the irradiation object is controlled by an autofocusing mechanism when the irradiation object is moved in the first direction.

A laser irradiation method comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of an irradiation object where a swell exists along a first direction;
• and
• irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and a second direction perpendicular to the first direction;
• wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism before the irradiation object is moved in the second direction, and
• wherein the irradiation object is moved relative to the first laser beam more slowly in the first direction than in the second direction.

A laser irradiation method comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of an irradiation object where a swell exists along a first direction;
• and
• irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and a second direction perpendicular to the first direction;
• wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism before the irradiation object is moved in the second direction.

A laser irradiation method comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot on a surface of an irradiation object by condensing the first laser beam with a lens to make the first laser beam incident obliquely into the surface of the irradiation object where a swell exists along a first direction;
• and
• irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and in a second direction perpendicular to the first direction;
• wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism when the irradiation object is moved in the first direction.

A method for manufacturing a semiconductor device comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of a semiconductor film where a swell exists along a first direction;
• and
• irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
• wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved in the second direction, and
• wherein the semiconductor film is moved relative to the first laser beam more slowly in the first direction than in the second direction.

A method for manufacturing a semiconductor device comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of a semiconductor film where a swell exists along a first direction;
• and
• irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
• wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved in the second direction.

A method for manufacturing a semiconductor device comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of a semiconductor film where a swell exists along a first direction;
• and
• irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
• wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism when the semiconductor film is moved in the first direction.

A method for manufacturing a semiconductor device comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of a semiconductor film where a swell exists along a first direction;
• and
• irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
• wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved in the second direction, and
• wherein the semiconductor film is moved relative to the first laser beam more slowly in the first direction than in the second direction.

A method for manufacturing a semiconductor device comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of a semiconductor film where a swell exists along a first direction;
• and
• irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
• wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved in the second direction.

A method for manufacturing a semiconductor device comprising:

• emitting a first laser beam from a first laser oscillator;
• forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of a semiconductor film where a swell exists along a first direction;
• and
• by irradiating the semiconductor film with the first laser beam while moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
• wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism when the semiconductor film is moved in the first direction.