Microwave plasma processing apparatus for semiconductor element production
AssigneeTokyo Electron Limited
InventorsSumi Tanaka, Jun Yamashita
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsSumi Tanaka, Jun Yamashita
Estimating the term…
A plasma processing apparatus 100 used to execute a specific type of processing such as plasma processing on a workpiece by supplying a processing gas into a chamber 110 while applying high-frequency power to generate plasma includes a stage 108 on which the workpiece is placed and a stage supporting unit 124 that holds the stage 108. Bellows 120 and 122 are disposed above and below the stage supporting unit 124 to support the stage 108 in a horizontal state relative to the chamber 110. Thus, a plasma processing apparatus that does not allow the workpiece stage to become tilted, affords ease of maintenance and is capable of stable processing is provided. In addition, the internal spaces at the bellows 120 and 122 are used as an exhausting pipe to achieve efficient and uniform exhaustion of the chamber 110.
A processing apparatus used to execute a specific type of processing on a workpiece inside a processing container, comprising:
A processing apparatus, comprising:
Dependencies are inferred from the claim text.