Remover compositions for dual damascene system
AssigneeEKC Technology, Inc.
InventorWai Mun Lee
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Abstract
A new remover chemistry based on a choline compound, such as choline hydroxide, is provided in order to address problems related to removal of residues, modified photoresists, photoresists, and polymers such as organic anti-reflective coatings and gap-fill and sacrificial polymers from surfaces involved in dual damascene structures without damaging the dielectrics and substrates involved therein. An etch stop inorganic layer at the bottom of a dual damascene structure may or may not be used to cover the underlying interconnect of copper. If not used, a process step of removing that protective layer can be avoided through a timed etch of the via in trench-first dual damascene processes.
Claims9
A method for removing polymer, photoresist or residues or combinations thereof from dual damascene structures using copper materials and low k materials, wherein said process first forms the trench and thereafter forms the via, wherein the dual damascene structure comprises contacting the etch residues with a composition comprising a choline compound, water, and an organic polar solvent that is miscible with water.
Dependencies are inferred from the claim text.