Methods of forming metal layers in the fabrication of semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Hun Seo, Gil-Heyun Choi, Jong-Myeong Lee, Hee-Sook Park
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Abstract
A metal deposition processing apparatus includes a first processing chamber configured for holding a semiconductor substrate therein. A second processing chamber is configured for holding the semiconductor substrate therein and for forming an upper metal layer thereon. A transfer chamber is connected to the first processing chamber and the second processing chamber. The transfer chamber is configured to transfer the semiconductor substrate between the first processing chamber and the second processing chamber.
Claims19
A method of forming metal layers on a semiconductor substrate comprising:
- forming a barrier metal layer on a semiconductor substrate in a first processing chamber using a metal organic chemical vapor deposition (MOCVD) method;
- flushing the barrier metal using at least one gas selected from the group consisting of gases containing a halogen group element and gases containing a halogen group element and a transitional metal;
- and
- forming an upper metal layer on the barrier metal layer in the second processing chamber, wherein the barrier metal layer is isolated from an oxygen atmosphere until the step of forming the upper metal layer to reduce oxygen contamination of the barrier metal layer.
A method of forming metal layers on a semiconductor substrate comprising:
- forming a barrier metal layer on a semiconductor substrate using a metal organic chemical vapor deposition (MOCVD) technique;
- flushing the barrier metal layer using at least one gas selected from the group consisting of gases containing a halogen group element and gases containing a halogen group element and a transition metal;
- and
- forming an upper metal layer on the barrier metal layer in the second processing chamber.
Dependencies are inferred from the claim text.