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US 7,547,631 B2Granted
Organometallic compounds
AssigneeRohm and Haas Electronic Materials LLC
InventorsDeodatta Vinayak Shenai-Khatkhate, Qing Min Wang
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Abstract
Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
Claims12
A method of depositing a film comprising the steps of:
- providing a substrate in a vapor deposition reactor;
- conveying as a precursor an organometallic compound of the formula (R1YCR2PR3)nM+mL1(m-n)L2p, wherein R1, R2 and R3 are independently chosen from H, (C1-C6)alkyl, (C2-C6)alkenyl, (C2-C6)alkynyl and aryl;
- Y═N or P;
- M=a metal;
- L1=an anionic ligand;
- L2=a neutral ligand;
- m=the valence of M;
- n=1-6;
- p=0-3;
- and wherein m>n in a gaseous form to the reactor;
- and depositing a film comprising the metal on the substrate.
8 more elements
A method of depositing a film comprising the steps of:
- providing a substrate in a vapor deposition reactor;
- conveying as a first precursor an organometallic compound of the formula (R1YCR2PR3)nM+mL1(m-n)L2p, wherein R1, R2 and R3 are independently chosen from H, (C1-C6)alkyl, (C2-C6)alkenyl, (C2-C6)alkynyl and aryl;
- Y═N or P;
- M=a metal;
- L1=an anionic ligand;
- L2=a neutral ligand;
- m=the valence of M;
- n=1-6;
- p=0-3;
- and wherein m>n in a gaseous form to the reactor;
- chemisorbing the first precursor compound on the surface of the substrate;
- removing any non-chemisorbed first precursor compound from the reactor;
- conveying a second precursor in a gaseous form to the reactor;
- reacting the first and second precursors to form a film on the substrate;
- and removing any unreacted second precursor.
12 more elements
A method for preparing phosphoamidine compounds comprising reacting a nitrile compound with a primary phosphine in the presence of a metal trifluoromethanesulfonate catalyst.
Dependencies are inferred from the claim text.