Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming a first conductive layer containing molybdenum over an insulating surface;
• forming a second conductive layer containing aluminum over the first conductive layer;
• forming a resist mask over the second conductive layer;
• processing the second conductive layer by dry etching using the resist mask;
• and
• processing the first conductive layer by wet etching using the resist mask,
• wherein an etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching,
• wherein the wet etching is performed by using a mixed solution containing phosphoric acid and nitric acid, and
• wherein a concentration ratio of the phosphoric acid to the nitric acid is 70% or more, and a temperature of the mixed solution is 40° C. or more.

A method for manufacturing a semiconductor device comprising:

• forming a first conductive layer containing molybdenum over an insulating surface;
• forming a second conductive layer containing a stack of aluminum and aluminum added with nickel over the first conductive layer;
• forming a resist mask over the second conductive layer;
• processing the second conductive layer by dry etching using the resist mask;
• and
• processing the first conductive layer by wet etching using the resist mask,
• wherein an etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching,
• wherein the wet etching is performed by using a mixed solution containing phosphoric acid and nitric acid, and
• wherein a concentration ratio of the phosphoric acid to the nitric acid is 70% or more.

A method for manufacturing a semiconductor device comprising:

• forming a first conductive layer containing molybdenum over an insulating surface;
• forming a second conductive layer containing a stack of aluminum and aluminum added with nickel over the first conductive layer;
• forming a resist mask over the second conductive layer;
• processing the second conductive layer by dry etching using the resist mask;
• and
• processing the first conductive layer by wet etching using the resist mask,
• wherein an etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching,
• wherein the wet etching is performed by using a mixed solution containing phosphoric acid and nitric acid, and
• wherein a concentration ratio of the phosphoric acid to the nitric acid is 70% or more, and a temperature of the mixed solution is 40° C. or more.

A method for manufacturing a semiconductor device comprising:

• forming a first conductive layer over an insulating surface;
• forming a second conductive layer over the first conductive layer;
• forming a resist mask over the second conductive layer;
• processing the second conductive layer by dry etching using the resist mask;
• and
• processing the first conductive layer by wet etching using the resist mask,
• wherein an etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching,
• wherein the second conductive layer is five times or more as thick as the first conductive layer, and
• wherein a thickness of the second conductive layer is 300 nm to 7μm.