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US 7,547,624 B2Granted
Semiconductor device and method of producing the same
AssigneeOki Semiconductor Co., Ltd.
InventorYasuo Tanaka
Life of this patent
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Abstract
A method of producing a semiconductor device includes the steps of forming a protrusion electrode on a semiconductor chip; and sealing the protrusion electrode and a semiconductor substrate with a resin layer. The method further includes the steps of polishing the resin layer until an upper surface of the protrusion electrode is exposed; polishing the exposed upper surface of the protrusion electrode; and forming a solder terminal on the polished upper surface of the protrusion electrode.
Claims10
A method of producing a semiconductor device, comprising the steps of:
- forming a protrusion electrode on a semiconductor chip;
- sealing the protrusion electrode and a semiconductor substrate with a resin layer;
- polishing the resin layer until an upper surface of the protrusion electrode is exposed;
- through a first polishing step using a rotational grinding stone under a first polishing condition and a second polishing step using the rotational grinding stone under a second polishing condition different from the first polishing condition;
- polishing the upper surface of the protrusion electrode;
- and
- forming a solder terminal on the upper surface of the protrusion electrode.
4 more elements
Dependencies are inferred from the claim text.