Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics

A method for forming a hybrid orientation substrate comprising:

• forming a direct-silicon-bonded (DSB) bilayer comprising an upper single-crystal Si layer having a first surface orientation disposed on a lower single-crystal Si layer having a second surface orientation different from the first surface orientation;
• selecting a plurality of first Si bilayer regions and a plurality of second Si bilayer regions, wherein said upper single-crystal Si layer will retain its original first surface orientation in said first bilayer regions and undergo an orientation change to a second surface orientation in said second bilayer regions;
• forming a trench isolation around said first and second Si bilayer regions to produce isolation-bordered first and second Si bilayer regions;
• amorphizing said first-orientation upper single-layer crystal Si layer in said second Si bilayer regions to form localized amorphized regions while leaving at least some of said second-orientation lower-single crystal Si layer in said second Si bilayer regions crystalline;
• and
• melting said localized amorphized regions and recrystallizing them to said second surface orientation using said second-orientation lower-layer Si in said second bilayer regions as a template, wherein process conditions used to effect said melting and recrystallization are selected to avoid any orientation change in said first bilayer regions,
• wherein said first and second surface orientations of said upper and lower Si layers of said DSB bilayer are selected from the group including (110) and (100),
• wherein said DSB bilayer comprises a single-crystal Si layer having a (110) surface orientation directly bonded to an underlying Si-on-insulator substrate layer having a (100) surface orientation,
• wherein said amorphizing comprises ion implantation,
• wherein said melting and recrystallizing comprises laser irradiation with one or more pulses of laser irradiation having pulse lengths in a range from about 10 ns to about 200 ns,
• wherein said laser irradiation has a wavelength in a range from about 190 to about 400 nm and a fluence in a range from about 0.1 to about 3 J/cm2, and
• wherein said laser irradiation further comprises:
• forming antireflection and/or absorber layer coatings on substrate surfaces to be irradiated prior to laser irradiation;
• and
• removing said antireflection and/or absorber layer coatings after said laser irradiation.