Deposition over mixed substrates using trisilane
AssigneeASM America, Inc.
InventorMichael A. Todd
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Abstract
Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.
Claims11
A method of reducing the number of steps in a semiconductor device manufacturing process, comprising:
- identifying a semiconductor device manufacturing process that comprises:
- (a) depositing a first silicon-containing film onto a single-crystal surface and a non-epitaxial surface,
- (b) forming a mask over the non-epitaxial surface to protect the first silicon-containing film over the non-epitaxial surface,
- (c) etching the first silicon-containing film over the single-crystal surface to expose the single-crystal surface, and
- (d) depositing a second silicon-containing film onto the exposed single-crystal surface;
- and
- modifying the semiconductor device manufacturing process by eliminating steps (b), (c), and (d) to provide a modified process capable of depositing in a single step a silicon-containing film that is epitaxial on the single-crystal surface and non-epitaxial on the non-epitaxial surface.
A method of reducing the number of steps in a semiconductor device manufacturing process, comprising:
- identifying a semiconductor device manufacturing process, wherein the semiconductor device manufacturing process comprises
- (a) depositing a first silicon-containing film onto a non-epitaxial surface and onto a single-crystal surface using a first silicon source, forming a mask over the non-epitaxial surface, after depositing the first silicon-containing film to protect the first silicon-containing film over the non-epitaxial surface;
- and etching the first silicon-containing film over the single-crystal surface to expose the single-crystal surface, prior to depositing the second silicon-containing film and, in a separate step,
- (b) depositing a second silicon-containing film onto the single-crystal surface using a second silicon source;
- wherein the first silicon source and the second silicon source are each individually selected from the group consisting of silane, disilane, dichlorosilane, trichlorosilane and silicon tetrachloride;
- and
- modifying the semiconductor device manufacturing process to form a modified process, the modified process comprising using trisilane in place of the first silicon source and the second silicon source, wherein the trisilane is capable of depositing a third silicon-containing film onto the single-crystal surface and the non-epitaxial surface in a single step.
A method of reducing the number of steps in a semiconductor device manufacturing process, comprising:
- identifying a semiconductor device manufacturing process, wherein the semiconductor device manufacturing process comprises (a) depositing a first silicon-containing film onto a non-epitaxial surface using a first silicon source and, in a separate step, (b) depositing a second silicon-containing film onto a single-crystal surface using a second silicon source;
- wherein the first silicon source and the second silicon source are silane;
- and
- modifying the semiconductor device manufacturing process to form a modified process, the modified process comprising using trisilane in place of the first silicon source and the second silicon source, wherein the trisilane is capable of depositing a third silicon-containing film onto the single-crystal surface and the non-epitaxial surface in a single step.
Dependencies are inferred from the claim text.