Method of making a semiconductor device comprising isolation trenches inducing different types of strain

A method, comprising:

• forming a first isolation trench in a semiconductor layer;
• filling said first isolation trench with a first dielectric fill material having a first type of intrinsic stress, wherein said first type of intrinsic stress is one of a tensile type stress and a compressive type stress;
• forming a second isolation trench in said semiconductor layer, wherein said first isolation trench is formed and filled prior to forming said second isolation trench;
• and
• filling said second isolation trench with a second dielectric fill material having a second type of intrinsic stress, wherein said second type of intrinsic stress is of an opposite type from said first type of intrinsic stress.