Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a gate insulation layer on a semiconductor substrate;
• forming a plurality of gate electrodes on the gate insulation layer;
• forming pocket regions by a pocket ion implantation process using the plurality of gate electrodes as an implantation mask;
• forming a capping electrode layer on the upper surface and the sidewall of the plurality of gate electrodes by depositing a polysilicon layer on the semiconductor substrate formed on the plurality of gate electrodes and removing the polysilicon layer formed between the plurality of gate electrodes;
• forming lightly doped regions by low-concentration ion implantation using the capping electrode layer as an implantation mask;
• forming spacer layers on the sidewall of the capping electrode layer;
• and
• forming source and drain regions by high-concentration ion implantation using the spacer layers as an implantation mask.