Low power electrically alterable nonvolatile memory cells and arrays
AssigneeMarvell World Trade Ltd.
InventorChih-Hsin Wang
Life of this patent
Estimating the term…
Loading patent…
AssigneeMarvell World Trade Ltd.
InventorChih-Hsin Wang
Estimating the term…
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first conductor of the conductor-filter system, arranging at least portion of a second conductor of a conductor-insulator system in contact with the filter, arranging a first insulator of the conductor-insulator system in contact with the second conductor at an interface, arranging a first region spaced from the second conductor, arranging a channel of the body between the first region and the second conductor, arranging a second insulator adjacent to the first region, arranging a charge storage region between the first and the second insulators, arranging a first portion of a word-line adjacent to and insulated from the charge storage region, and arranging a second portion of the word-line adjacent to and insulated from the body.
A method of providing a memory cell, comprising:
A method of providing a memory cell, comprising:
A method of providing a memory cell, comprising:
Dependencies are inferred from the claim text.