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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHidekazu Miyairi, Atsuo Isobe, Tomoaki Moriwaka, Akihisa Shimomura
Estimating the term…
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.
A method for fabricating a semiconductor device comprising:
A method for fabricating a semiconductor device comprising:
A method for fabricating a semiconductor device comprising:
A method for fabricating a semiconductor device comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Materials: being conductive materials, e.g. metallic silicides
Single-crystal growth directly from the solid state
Elements: silicon
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
Term ended 16 Jul 2023 (estimated)
1. Field of the Invention
The present invention relates to a semiconductor element formed by using a semiconductor film having a crystal structure (also referred to as crystalline semiconductor film) and its fabrication method and a semiconductor device provided with a circuit obtained by integrating the semiconductor element and its fabrication method. The present invention relates to a field effect transistor in which a channel-forming region is formed by a crystalline semiconductor film formed on an insulating surface, particularly to a thin-film transistor.
2. Related Art
FIGS. 1A to 1C are a top view and longitudinal sectional views for explaining fabrication steps of a transistor of the present invention;
FIGS. 2A to 2C are a top view and longitudinal sectional views for explaining fabrication steps of a transistor of the present invention;
FIGS. 3A to 3D are a top view and longitudinal sectional views for explaining fabrication steps of a transistor of the present invention;
For this embodiment, a mode for fabricating a thin-film transistor by executing the present invention is described. The number of transistors to be fabricated can be properly decided by an executor, and drawings used do not restrict the present invention.
First, FIGS. 1A to 1C are described below. FIG. 1A is a top view, FIG. 1B is a sectional view taken along the line A-A′ in FIG. 1A, and FIG. 1C is a sectional view taken along the line B-B′ in FIG. 1A. FIGS. 1A to 1C show states in which a first insulating film 102 and a linear-stripe-pattern-formed second insulating film 103 are formed on a substrate 101. In this specification, a concave portion denotes the portion shown by symbol 103a and a convex portion denotes the portion shown by symbol 103b.
The substrate 101 can use any one of a marketed no-alkali glass substrate, quartz substrate, sapphire substrate, substrate obtained by covering the surface of a single-crystal or polycrystal semiconductor substrate with an insulating film, and substrate obtained by covering the surface of a metallic substrate with an insulating film. To solve the problem of obtaining an inexpensive semiconductor device, it is allowed to use an inexpensive no-alkali glass substrate.