Method for manufacturing semiconductor light emitting device
AssigneeMitsubishi Electric Corporation
InventorsHitoshi Nakamura, Hajime Abe, Noriaki Ishio
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Abstract
A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from a location opposite the light-emitting units, and offset from a desired cleavage line intersecting the light-emitting units. A scratch is formed on the desired cleavage line. The wafer is cleaved, originating on the scratch, along the cleavage line orientation, in the direction from the dummy pattern, toward the light-emitting units.
Claims4
A method for manufacturing a semiconductor light-emitting device comprising:
- forming a laminated structure including a plurality of light-emitting units on a single crystal semiconductor wafer;
- forming respective electrode patterns on said wafer at locations opposite said light-emitting units;
- forming first dummy patterns on said wafer at respective locations spaced apart from the locations opposite said light-emitting units, and offset from a desired cleavage line that intersects said light-emitting units;
- forming a scratch on said wafer on the desired cleavage line;
- and
- cleaving said wafer, originating on said scratch, along a cleavage orientation in a cleavage direction, from said first dummy patterns toward said light-emitting units.
Dependencies are inferred from the claim text.