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AssigneeSamsung Electronics Co., Ltd.
InventorsHyun Jung Park, Sang Yoon Lee, Eun Jeong Jeong, Kook Min Han, Jung Seok Hahn, Tae Woo Lee
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Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.
A method for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer, the method comprising:
A method for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer, the method comprising:
A method for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer, the method comprising:
A method for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer, the method comprising:
A method for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer, the method comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Electrodes: ohmic electrodes, e.g. source or drain electrodes
Characterised by the gate dielectrics: the gate dielectric comprising only organic materials
Polycyclic condensed aromatic hydrocarbons, e.g. anthracene: containing five rings, e.g. pentacene
Organic electric solid-state devices
About 1 month of term left · ends 22 Nov 2026 (estimated)
This non-provisional application claims priority under 35 U.S.C. § 119 of Korean Patent Application No. 2005-56196 filed on Jun. 28, 2005, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
Example embodiments of the present invention relate to an organic thin film transistor and to a method for fabricating the same. More particularly, example embodiments of the present invention relate to a method for fabricating an organic thin film transistor with improved (e.g., higher) charge carrier mobility. According to example embodiments of the present invention, the organic thin film transistor may include a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes and an organic semiconductor layer. In example embodiments of the present invention, the metal oxide source/drain electrodes may be surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group so that the hydrophobic quality, charge carrier mobility and/or work function of a metal oxide constituting the source/drain electrodes may be increased.
Example embodiments the present invention may be more clearly understood from the following non-limiting detailed description taken in conjunction with the accompanying drawings. FIGS. 1-2 represent non-limiting examples, embodiments and/or intermediates of the present invention as described herein.
FIG. 1 is a cross-sectional view schematically showing the structure of an organic thin film transistor fabricated in accordance with an example embodiment of the present invention; and
FIG. 2 is a graph showing the current transfer characteristics of organic thin film transistors fabricated pursuant to non-limiting Examples 1 to 4 of the present invention and pursuant to Comparative Examples 1 to 4.
Various example embodiments of the present invention will now be described more fully with reference to the accompanying drawings in which some example embodiments of the invention are shown. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity.
Detailed illustrative embodiments of the present invention are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments of the present invention. This invention may, however, may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
Accordingly, while example embodiments of the invention are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intent to limit example embodiments of the invention to the particular forms disclosed. To the contrary, example embodiments of the invention are also intended to cover all modifications, equivalents, and alternatives falling within the scope of the invention. Like numbers refer to like elements throughout the description of the figures.