Method of manufacturing optical interference color display

#This application claims the priority benefit of Taiwan application serial no. 94103551, filed on Feb. 4, 2005. All disclosure of the Taiwan application is incorporated herein by reference.

#1. Field of the Invention

#The present invention relates to a method of fabricating an optical interference color display, and more particularly to a method of fabricating an optical interference color display capable of controlling air gaps formed in the optical interference color display precisely.

#FIG. 1 is a schematic drawing showing a conventional optical interference color display.

#FIGS. 2A-2D are cross sectional views showing progress of a method of forming sacrificial layers.

#FIGS. 3A-3F are cross sectional views showing progress of a method of fabricating an optical interference color display according to the first embodiment of the present invention.

#FIGS. 3A-3F are cross sectional views showing progress of a method of fabricating an optical interference color display according to the first embodiment of the present invention. Referring to FIG. 3A, a transparent substrate 210 is provided. Its material can be, for example, glass or plastic. A first electrode structure 220 is then formed over the transparent substrate 210.

#The method of forming the first electrode structure 220 can be, for example, a physical vapor deposition (PVD) process or other suitable processes, to deposit indium tin oxide (ITO) over the transparent substrate 210. The ITO layer is then patterned by a photolithographic process and an etching process to form a plurality of first transparent electrodes 222. An absorption layer 224 is then deposited over the first electrodes 222 and partial area of the substrate 210 where no first electrodes 222 are formed. In one embodiment of the present invention, the material of the absorption layer 224 can be, for example, Chromium (Cr) or Molybdenum chromium (MoCr).

#Finally, an optical layer 226 is deposited over the absorption layer 224. Wherein, the material of the optical layer 226 can be, for example, silicon nitride or silicon oxide. Of course, the optical layer 226 is not limited to a single layer. It may comprise a plurality of dielectric layers with high refractive index and a plurality of dielectric layers with high refractive index stacked alternately. The steps described above form the first electrode structure 220. The first electrode structure 220 comprises the first electrodes 222, the absorption layer 224 and the optical layer 226. In addition, the first area 10, the second area 20 and the third area 30 are defined on the first electrode structure 220.