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US 7,541,264 B2Granted
Temporary wafer bonding method for semiconductor processing
AssigneeDow Corning Corporation
InventorsGeoffrey Bruce Gardner, Brian Robert Harkness
Life of this patent
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Abstract
A method for temporary wafer bonding employs an addition reaction curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a solvent. The film prepared by curing the composition is removable with an etching solution.
Claims19
A method comprising:
- (1) forming a film by applying an addition reaction curable adhesive composition to a first substrate, where the addition reaction curable composition is a hydrosilylation reaction curable composition comprising:
- (A) a polyorganosiloxane containing an average of at least two silicon- bonded unsaturated organic groups per molecule,
- (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition,
- (C) a catalytic amount of a hydrosilylation catalyst,
- optionally (D) a solvent,
- optionally (E) an inhibitor,
- optionally (F) a filler,
- optionally (G) a treating agent,
- optionally (H) a spacer,
- optionally (I) an adhesion promoter,
- optionally (J) a surfactant, and
- optionally (K) a colorant;
- optionally (2) heating the product of step (1),
- (3) applying a second substrate to the film, where at least one of the first substrate and the second substrate is a semiconductor wafer,
- (4) curing the film to form a cured film,
- (5) processing the semiconductor wafer, and
- (6) removing the cured film with an etching solution.
14 more elements
Dependencies are inferred from the claim text.