Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
AssigneeFUJIFILM Corporation
InventorYasutomo Kawanishi
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AssigneeFUJIFILM Corporation
InventorYasutomo Kawanishi
Estimating the term…
The invention provides a resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a compound for use in the resist composition and a pattern forming method using the resist composition, which are a resist composition comprising (A) a sulfonium salt represented by the following formula (I); and a pattern forming method using the resist composition: wherein R1 represents an alkyl group or an aryl group, R2 to R9 each independently represents a hydrogen atom or a substituent and may combine with each other to form a ring, Z represents an electron-withdrawing divalent linking group, Xn− represents an n-valent anion, n represents an integer of 1 to 3, and m represents the number of anions necessary for neutralizing the electric charge.
A resist composition comprising (A) a sulfonium salt represented by the following formula (I);
A resist composition comprising (A) a sulfonium salt represented by the following formula (I);
A sulfonium compound represented by formula (II):
A sulfonium compound represented by formula (III):
Dependencies are inferred from the claim text.