Aluminum fluoride films for microelectromechanical system applications
AssigneeQUALCOMM MEMS Technologies, Inc.
InventorChih-Wei Chiang
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Abstract
A microelectromechanical systems (MEMS) device utilizing an aluminum fluoride layer as an etch stop is disclosed. In one embodiment, a MEMS device includes a first electrode having a first surface; and a second electrode having a second surface facing the first surface and defining a gap therebetween. The second electrode is movable in the gap between a first position and a second position. At least one of the electrodes includes an aluminum fluoride layer facing the other of the electrodes. During fabrication of the MEMS device, a sacrificial layer is formed between the first and second electrodes and is released to define the gap. The aluminum fluoride layer serves as an etch stop to protect the first or second electrode during the release of the sacrificial layer.
Claims40
An interferometric modulator, comprising:
- a first electrode having a first surface;
- and
- a second electrode having a second surface facing the first surface and defining a gap therebetween, the second electrode movable in the gap between a first position and a second position, the first position being a first distance from the first electrode, the second position being a second distance from the first electrode, the second distance being greater than the first distance,
- wherein at least one of the electrodes comprises an aluminum fluoride layer facing the other of the electrodes,
- wherein the aluminum fluoride layer is resistant to a fluorine-based etchant.
An interferometric modulator, comprising:
- a first electrode having a first surface;
- and
- a second electrode having a second surface facing the first surface and defining a gap therebetween, the second electrode movable in the gap between a first position and a second position, the first position being a first distance from the first electrode, the second position being a second distance from the first electrode, the second distance being greater than the first distance,
- wherein at least one of the electrodes comprises an aluminum fluoride layer facing the other of the electrodes,
- wherein the aluminum fluoride layer reduces stiction between the electrodes during operation relative to when the electrodes do not comprise the aluminum fluoride layer.
An interferometric modulator, comprising:
- a first electrode having a first surface;
- and
- a second electrode having a second surface facing the first surface and defining a gap therebetween, the second electrode movable in the gap between a first position and a second position, the first position being a first distance from the first electrode, the second position being a second distance from the first electrode, the second distance being greater than the first distance,
- wherein at least one of the electrodes comprises an aluminum fluoride layer facing the other of the electrodes,
- wherein the aluminum fluoride layer has a thickness between about 50 Å and about 200 Å.
An interferometric modulator, comprising:
- a first electrode having a first surface;
- and
- a second electrode having a second surface facing the first surface and defining a gap therebetween, the second electrode movable in the gap between a first position and a second position, the first position being a first distance from the first electrode, the second position being a second distance from the first electrode, the second distance being greater than the first distance;
- a display;
- a processor that is in electrical communication with the display, the processor being configured to process image data;
- and
- a memory device in electrical communication with the processor,
- wherein at least one of the electrodes comprises an aluminum fluoride layer facing the other of the electrodes.
An interferometric modulator, comprising:
- transmissive means for at least partially transmitting incident light, the transmissive means having a first surface;
- reflective means for substantially reflecting incident light, the reflective means having a second surface facing the first surface;
- and
- moving means for moving the reflective means relative to the transmissive means between a driven position and an undriven position, the driven position being closer to the transmissive means than is the undriven position,
- wherein at least one of the transmissive and reflective means comprises a layer formed of aluminum fluoride, the layer facing the other of the transmissive and reflective means.
A method of making an interferometric modulator, comprising:
- forming a lower electrode;
- forming a sacrificial layer over the lower electrode;
- forming an upper electrode;
- and
- forming an aluminum fluoride layer between forming the lower electrode and forming the upper electrode, wherein the aluminum fluoride layer has a thickness of less than about 200 Å.
Dependencies are inferred from the claim text.