US 7,535,152 B2 · Lamb wave device

Abstract

A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaO3 or LiNbO3, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.

Claims5

Dependent claims

A Lamb wave device comprising:

a base substrate;
a piezoelectric thin film provided on the base substrate and including a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface;
and
an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film;
wherein
the piezoelectric thin film is made of one of LiTaO3 and LiNbO3;
and
a c-axis of the piezoelectric thin film is set in approximately the same direction as that of a substantially perpendicular line to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.

5 more elements

Dependencies are inferred from the claim text.

Lamb wave device

Life of this patent

Lamb wave device

Life of this patent

Abstract

Claims5