Superconducting boron nanostructures
AssigneeYale University
InventorsLisa Pfefferle, Dragos Ciuparu
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Abstract
A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.
Claims17
A one-dimensional superconducting device comprising a boron nanostructure having a diameter of less than 50 nm and impregnated with an electron donor element, said boron nanostructure having a superconducting transition temperature of about 100 degrees K.
A one-dimensional superconducting device comprising a boron nanotube having a diameter of less than 50 nm and impregnated with an electron donor element, said boron nanotube having a superconducting transition temperature greater than 36 degrees K.
A one-dimensional superconducting device comprising a boron nanofiber having a diameter of less than 1 nm and impregnated with an electron donor element, said boron nanofiber having a superconducting transition temperature greater than 36 degrees K.
Dependencies are inferred from the claim text.