Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods
AssigneeSII NanoTechnology Inc.
InventorsJunichi Tashiro, Yutaka Ikku, Toshiaki Fujii
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Abstract
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
Claims6
A method of forming a sample section containing at least two different materials with respect to a direction parallel with a sample surface by use of a focused ion beam apparatus, the sample section forming method using a focused ion beam apparatus comprising the steps of:
- detecting secondary charged particles generated by irradiating the focused ion beam while performing etching on a desired region of a sample by scan-irradiating a focused ion beam to form a section vertically to the sample surface;
- and
- detecting changing amounts of signals based on the detected secondary charged particles and terminating the etching depending upon the changing amounts.
A focused ion beam apparatus comprising:
- an ion generation source for generating ions;
- an ion optical system that restricts the ions into a focused ion beam and irradiating, while scanning, the focused ion beam to the sample surface;
- a sample table for supporting a sample;
- a sample-table control mechanism for moving the sample table;
- a secondary charged particle detector that detects a secondary charged particle generated by irradiating the focused ion beam;
- and
- an end-point detecting mechanism that detects an end point from the change amount of a secondary charged particle signal amount detected at the secondary charged particle detector when proceeding an etching on a section formed vertically to the sample surface by scan-irradiating the focused ion beam.
A method of forming a section in a sample surface by san-irradiating a focused ion beam in a direction parallel with an axis of a lens barrel of a focused ion beam apparatus and forming a sample section in a desired region of a sample while etching the section, the sample section forming method using a focused ion beam apparatus characterized by including:
- a step of detecting a secondary charged particle generated by irradiating the focused ion beam;
- and a step of detecting a signal amount change of a detected signal of the secondary charged particle and terminating the etching depending upon the change amount when there is a change of signal amount.
Dependencies are inferred from the claim text.