Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same

A method of fabricating a semiconductor probe having a resistive tip with a low aspect ratio, the method comprising:

• forming a mask layer on a top surface of a substrate which is doped with a first impurity;
• forming a stripe-shaped photoresist on the mask layer and wet-etching the mask layer using the photoresist as a mask;
• doping a region of the substrate not covered by the wet-etched mask layer with a second impurity which is opposite in polarity to the first impurity to form first and second semiconductor electrode regions;
• annealing the substrate to reduce a distance between the first and second semiconductor electrode regions, and forming a resistive region doped with the second impurity along outer boundaries of the first and second semiconductor electrode regions, wherein the resistive region is doped lighter than the region of the substrate not covered by the wet-etched mask layer;
• patterning the mask layer to form a quadrangular mask layer;
• etching the quadrangular mask layer and the substrate not covered by the quadrangular mask layer to form a resistive tip on the substrate;
• and
• etching a bottom surface of the substrate to form a cantilever such that the resistive tip is located at an end portion of the cantilever.