Methods for creating a densified group IV semiconductor nanoparticle thin film

A method of forming a densified nanoparticle thin film, comprising:

• positioning a substrate in a first chamber;
• depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent;
• positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4;
• heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed;
• exposing the porous compact to an HF vapor for a second time period of between about 0.1 minutes and about 10 minutes, and heating the porous compact for a second temperature of between about 300° C. and about 1350° C.;
• heating the porous compact to a third temperature between about 300° C. and about 800° C., and for a third time period of about 30 minutes;
• wherein the densified nanoparticle thin film is formed.

A method of forming a densified nanoparticle thin film, comprising:

• positioning a substrate in a first chamber;
• depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent;
• heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed;
• positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4;
• exposing the porous compact to an HF vapor for a second time period of between about 0.1 minutes and about 10 minutes, and heating the porous compact for a second temperature of between about 300° C. and about 1350° C.;
• heating the porous compact to a third temperature between about 300° C. and about 800° C., and for a third time period of about 30 minutes;
• wherein the densified nanoparticle thin film is formed.