Mask, exposure method and production method of semiconductor device

An exposure method using a mask comprising

• a supporting frame,
• a beam portion for sectionalizing a region surrounded by said supporting frame,
• a thin film formed on the region sectionalized by said beam portion, and
• apertures of a pattern formed on said thin film and obtained by complementarily dividing a circuit pattern to be transferred on an object to be exposed;
• wherein said beam portion comprises
• a first beam portion wherein a plurality of beams extending by inclining with respect to two coordinate axes composing a coordinate system for specifying a position of said pattern are arranged at regular intervals, and
• a second beam portion wherein a plurality of beams extending by inclining with respect to said two coordinate axes and intersecting with said first beam portion are arranged at regular intervals;
• wherein four unit exposure regions for performing exposure by being superimposed on said object to be exposed are set in the region surrounded by said supporting frame, and said thin film of at least two of said unit exposure regions exists at any position when superimposing said four unit exposure regions;
• for performing exposure by repeating
• a charged particle beam irradiation step for irradiating a charged particle beam on said four unit exposure regions of said mask, and
• a moving step for moving relative positions of said mask and said object to be exposed, and
• superimposing said four unit exposure regions of said mask on said object to be exposed.

A production method of a semiconductor device for forming layers of a pattern by repeating a step of forming a processing film on a substrate, a step of forming a photosensitive film on said processing film, a step of performing exposure of a pattern of a mask on said photosensitive film, and a step of performing pattern processing on said processing film by performing etching on said processing film by using as an etching mask the photosensitive film subjected to pattern exposure,

• using a mask comprising
• a supporting frame,
• a beam portion for sectionalizing a region surrounded by said supporting frame,
• a thin film formed on the region sectionalized by said beam portion, and
• apertures of a pattern formed on said thin film and obtained by complementarily dividing a circuit pattern to be transferred on an object to be exposed;
• wherein said beam portion comprises
• a first beam portion wherein a plurality of beams extending by inclining with respect to two coordinate axes composing a coordinate system for specifying a position of said pattern are arranged at regular intervals, and
• a second beam portion wherein a plurality of beams extending by inclining with respect to said two coordinate axes and intersecting with said first beam portion are arranged at regular intervals;
• wherein four unit exposure regions for performing exposure by being superimposed on said object to be exposed are set in the region surrounded by said supporting frame, and said thin film of at least two of said unit exposure regions exists at any position when superimposing said four unit exposure regions;
• wherein in a step of performing exposure of a pattern of said mask on said photosensitive film,
• exposure is performed by repeating
• a charged particle beam irradiation step for irradiating a charged particle beam on said four unit exposure regions of said mask, and
• a moving step for moving relative positions of said mask and said object to be exposed, and
• superimposing said four unit exposure regions of said mask on said object to be exposed.